抄録
With the technology scaling, the charge sharing effect is becoming more prominent. Using the property of DICE latch, we present a DICE-based test structure to measure the strength of charge sharing effect. Three-dimensional TCAD simulations are done to simulate the DICE property. And a test chip is fabricated by the commercial 65nm bulk CMOS process to verify our proposed test structure. Heavy-ion experiment results indicate that this test structure is efficient to obtain the strength of charge sharing effect.
