Evaluating the Single Event Sensitivity of Dynamic Comparator in 5 Gbps SerDes

Chunmei Hu; Shuming Chen; Pengcheng Huang; Yao Liu; Jianjun Chen

doi:10.1587/elex.12.20150860

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Evaluating the Single Event Sensitivity of Dynamic Comparator in 5 Gbps SerDes

Chunmei Hu, Shuming Chen, Pengcheng Huang, Yao Liu, Jianjun Chen

著者情報

キーワード: dynamic comparator, SE sensitivity, LET threshold, sensitive window rate

ジャーナルフリー早期公開

論文ID: 12.20150860

DOI https://doi.org/10.1587/elex.12.20150860

この記事には本公開記事があります。

The final version of this article is now available: Vol. 12 (2015), No. 23 pp. 20150860-20150860

詳細

抄録

The radiation induced soft error of dynamic comparator for a 65 nm CMOS technology in 5 Gbps half-rate SerDes (serializer and deserializer) is evaluated using three-dimensional TCAD mixed-mode simulation. The sensitivity of MOSFET is simulated combined with the polarity of differential inputs and the working phases. Four types of single-event (SE) response are classified and the sensitivity grades are summarized. Our research presents that the NMOS of the cross-coupled inverter is the most sensitive.

責任著者(Corresponding author)

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