Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Takaaki Ibuchi; Tsuyoshi Funaki; Shinji Ujita; Masahiro Ishida; Tetsuzo Ueda

doi:10.1587/elex.12.20150912

This article has now been updated. Please use the final version.

Conducted noise of GaN Schottky barrier diode in a DC–DC converter

Takaaki Ibuchi, Tsuyoshi Funaki, Shinji Ujita, Masahiro Ishida, Tetsuzo Ueda

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Keywords: Gallium nitride Schottky barrier diode, Silicon carbide Schottky barrier diode, reverse recovery, DC–DC converter, conducted noise

JOURNAL FREE ACCESS Advance online publication

Article ID: 12.20150912

DOI https://doi.org/10.1587/elex.12.20150912

The final version of this article is now available: Vol. 12 (2015), No. 24 pp. 20150912-20150912

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Abstract

Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) offer superior electrical performance over conventional silicon (Si) devices for high-voltage applications. Their fast switching operation and low switching losses help increase the efficiency of power conversion circuit. This study focuses on the switching characteristics of a GaN Schottky barrier diode (SBD) and investigates the conducted noise characteristics in a DC–DC boost converter by comparing a Si PiN diode and a SiC SBD.

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