論文ID: 13.20151047
SiC power devices have high temperature operation capability compared to Si power devices. The thermal characteristics of packaged SiC devices are important for thermal management in high temperature range. This study investigates thermal characteristics of a packaged SiC device for high temperature operation. The transient and steady state thermal resistances of the packaged SiC SBDs are measured using JESD51-1 standard. In addition, the numerical thermal simulation of the packaged SiC SBDs using finite difference method (FDM) are carried out considering nonlinear thermal properties of package materials. In the current research, the thermal resistance of the packaged SiC SBD increases by about 10% in the temperature rise from 27°C to 250°C.
