IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

Thermal management of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC)
Fengjuan WangNingmei Yu
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JOURNAL FREE ACCESS Advance online publication

Article ID: 13.20151117

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Abstract

The analytical temperature model of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC) is developed based on the Fourier’ law of heat transfer and energy conservation, and is verified by employing ANSYS. Based on the theoretical model, several design guidelines are concluded. From the point of thermal management, 1) TSV should be inserted with high density; 2) Cu is a better material than Al and W; 3) the 3D IC layer should be as few as possible; 4) the silicon substrate thickness should be as thin as possible; 5) the temperature-sensitive modules should be placed near TSV and heat sink.

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