Thermal management of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC)

Fengjuan Wang; Ningmei Yu

doi:10.1587/elex.13.20151117

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Thermal management of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC)

著者情報

キーワード: thermal management, three-dimensional integrated circuit (3D IC), coaxial through-silicon-via (C-TSV), temperature

ジャーナルフリー早期公開

論文ID: 13.20151117

DOI https://doi.org/10.1587/elex.13.20151117

この記事には本公開記事があります。

The final version of this article is now available: Vol. 13 (2016), No. 11 pp. 20151117-20151117

詳細

抄録

The analytical temperature model of coaxial through-silicon-via (C-TSV)-based three-dimensional integrated circuit (3D IC) is developed based on the Fourier’ law of heat transfer and energy conservation, and is verified by employing ANSYS. Based on the theoretical model, several design guidelines are concluded. From the point of thermal management, 1) TSV should be inserted with high density; 2) Cu is a better material than Al and W; 3) the 3D IC layer should be as few as possible; 4) the silicon substrate thickness should be as thin as possible; 5) the temperature-sensitive modules should be placed near TSV and heat sink.

責任著者(Corresponding author)

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