Collection of charge in NMOS from single event effect

Abstract

In aerospace environment, single event effect (SEE) will occur and single event transient (SET) current pulse will be induced in drain/source region of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) when high energy ion strikes semiconductor devices. The typical double exponential transient current model proposed for traditional technology is not suitable for ultra deep sub-micron technology devices. In this paper, a novel multi-dimensional double exponential transient current model is proposed based on our new understanding of ultra deep sub-micron radiation mechanism, which has been validated using Technology Computer Aided Design (TCAD) simulation. This model can be important basis for the searching of SEE at circuit level and can be transparently applied to evaluate the effectiveness and performance of hardening technique, thus shortening the developing cycle of integrated circuit intended to operate within aerospace environment.