抄録
In this paper, a C–band wideband power amplifier (PA) using a GaN HEMT is proposed. The general Class–J mode, which offer a bigger design space for the fundamental and harmonic terminations, is introduced to implement wideband PA. Then, to verify the mechanism mentioned above, a wideband PA operating from 3.5 to 6.0 GHz is proposed and fabricated. Meanwhile, the load/source harmonic and baseband impedances are also considered for the linearity. The amplifier exhibits 8–11 dB gain and 51%–64% drain efficiency (DE) covering from 3.5 to 5.5 GHz.
