2-μm wavelength tunable distributed Bragg reflector laser

Takuya Kanai; Naoki Fujiwara; Yoshitaka Ohiso; Hiroyuki Ishii; Makoto Shimokozono; Mikitaka Itoh

doi:10.1587/elex.13.20160655

This article has now been updated. Please use the final version.

2-μm wavelength tunable distributed Bragg reflector laser

Takuya Kanai, Naoki Fujiwara, Yoshitaka Ohiso, Hiroyuki Ishii, Makoto Shimokozono, Mikitaka Itoh

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Keywords: semiconductor laser, tunable laser, gas sensing

JOURNAL FREE ACCESS Advance online publication

Article ID: 13.20160655

DOI https://doi.org/10.1587/elex.13.20160655

The final version of this article is now available: Vol. 13 (2016), No. 16 pp. 20160655-20160655

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Abstract

We demonstrate a tunable distributed Bragg reflector (DBR) laser diode operating in the 2-μm region. A strained InGaAs multi-quantum well is used for the active region, and InGaAs is used for the passive region in the 2-μm DBR laser. The fabricated DBR laser emits a single-mode continuous wave at 2.02 μm, and the output power exceeds 6 mW at room temperature. A wavelength tuning range of about 10 nm is achieved by controlling of injection currents to the DBR regions.

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