IEICE Electronics Express
Online ISSN : 1349-2543
Peak electric field shifting induced by avalanche injection under static avalanche in high voltage diode
Cailin WangLei Zhang
Author information
JOURNALS FREE ACCESS Advance online publication

Article ID: 14.20170627

Details
Download PDF (876K) Contact us
Abstract

The peak electric field shifting far away from the pn- junction and nn- junction under static avalanche in high voltage diode was investigated by the device numerical simulation in this paper. An analysis of the electric field gradient analytical model was used to explain the reason of the peak electric field shifting. The results show that the peak electric field shifting is essentially induced by the avalanche generated carriers under static avalanche and occurs even at a low reverse current density level. In addition, from the borderline of peak electric field shifting, it is deduced that, with the increases of the doping concentration of p buffer layer and base doping concentration, the peak electric field shifting occurs at the higher current density.

Information related to the author
© 2017 by The Institute of Electronics, Information and Communication Engineers

Recently visited articles
feedback
Top