1) Key Laboratory of Modern Acoustics, Institute of Acoustics and School of Physics, Nanjing University
2) School of Electronic & Information Engineering, Suzhou University of Science and Technology
3) RF Power Device and Circuit Engineering Research Center
4) Photo Department of Electrical Engineering and Computer Science, University of California, Irvine
MMIC, high-power amplifier (HPA), GaAs HBT, GaN HEMT, high-efficiency, broadband
The final version of this article with its full bibliographical information is available. To access the article, click here (Vol. 14 (2017), No. 18 pp. 20170639-20170639).
This paper presents a compact high-gain, high-efficiency, and broadband (higher than one octave) UHF high-power amplifier (HPA) using gallium arsenide (GaAs) and gallium nitride (GaN) technologies, the broadband HPA was fully integrated in a monolithic microwave integrated circuit (MMIC) with input and output matched to 50Ω, the total size of the HPA is only 10×10mm2. It generates a power gain higher than 44dB, a continuous wave (CW) output power greater than 10W and a corresponding power added efficiency (PAE) better than 55 percent across the full band from 220∼520MHz. This design approach for high power GaN in space saving plastic package is enabling system designers to overcome the challenge to reduce the size, weight, and cost of system designs, while meeting the requirements of higher power, efficiency and reliability.
Edited and published by : The Institute of Electronics, Information and Communication Engineers Produced and listed by : Komiyama Printing Co., LTD.