IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

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A 125-170 GHz Wideband High-power Amplifier Using 0.5-μm InP DHBT
Xiao LiYong ZhangTiedi ZhangHaiyan LuWei ChengRuimin Xu
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論文ID: 14.20170684

この記事には本公開記事があります。
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In this paper, a D-band power amplifier (PA) based on 0.5-μm InP DHBT is presented. Wilkinson combiners with broadband stepped-impedance matching are used, and the eight-way PA is designed for wideband power performance. As input power is fixed at 3 dBm, the PA exhibits a saturated output power of 16.8 dBm and 7.9% PAE at 150 GHz with >45-GHz 3-dB power bandwidth from 125 GHz to 170 GHz. Meanwhile the 1-dB gain compression output power is 15.9 dBm at 150 GHz. The >45-GHz 3-dB power bandwidth means a great flatness of power gain which is outstanding in reported D-band PAs to our best knowledge.

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