Zongliang Huo1) 2)
1) Institute of Microelectronics of Chinese Academy of Sciences
2) School of Microelectronics, University of Chinese Academy of Sciences
charge pump, CPC, small ripple, flash memory
The final version of this article with its full bibliographical information is available. To access the article, click here (Vol. 14 (2017), No. 18 pp. 20170699-20170699).
This paper represents a 4.5V regulated charge pump with extremely small ripple. The pump designed with Voltage Doubler (VD) significantly reduces the output ripple voltage. In addition, this circuit utilizes a controllable pumping current (CPC) technology, which achieves automatically adjusting output current by feedback mechanism and resizing transfer transistors. The proposed charge pump has been demonstrated in 0.32µm 3D NAND periphery technology under 3V power supply. Simulation results show that the output ripple voltage is 1.2mV at 5mA load current with 0.1µF load capacitance. The maximum current drivability and power efficiency is 8mA and 81% respectively.
Edited and published by : The Institute of Electronics, Information and Communication Engineers Produced and listed by : Komiyama Printing Co., LTD.