An embedded gate graphene field effect transistor with natural Al oxidization dielectrics and its application to frequency doubler

Rongzhou Zeng; Ping Li; Yiwen Wang; Gang Wang; Qingwei Zhang; Yongbo Liao; Xiaodong Xie

doi:10.1587/elex.14.20170707

This article has now been updated. Please use the final version.

An embedded gate graphene field effect transistor with natural Al oxidization dielectrics and its application to frequency doubler

Rongzhou Zeng, Ping Li, Yiwen Wang, Gang Wang, Qingwei Zhang, Yongbo Liao, Xiaodong Xie

Author information

Rongzhou Zeng
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Ping Li
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Yiwen Wang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Gang Wang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Qingwei Zhang
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China
Yongbo Liao
School of Energy Science and Engineering, University of Electronic Science and Technology of China
Xiaodong Xie
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

Keywords: Embedded gate, graphene field effect transistor, natural Al oxidization dielectrics, frequency doubler, high efficiency

JOURNAL FREE ACCESS Advance online publication

Article ID: 14.20170707

DOI https://doi.org/10.1587/elex.14.20170707

The final version of this article is now available: Vol. 14 (2017), No. 20 pp. 20170707-20170707

Details

Abstract

A high efficiency frequency doubler is realized based on a single embedded gate (EG) graphene field effect transistor (GFET) with natural Al oxidation dielectrics. Due to elimination of the step of depositing gate dielectrics, the fabrication process of the EG-GFET is improved compared to conventional EG-GFETs. The capacitive efficiency of the EG-GFET is improved up to 80 times compared to the conventional silicon back gate (BG) GFET with 300 nm thick SiO₂,which is higher than that of most conventional EG-GFETs. Thanks to the high capacitive efficiency, the conversion gain of the frequency doubler is 14 times higher than that of the BG-GFET based frequency doubler.

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