Article ID: 14.20170758
A reconfigurable U-shaped tunnel field-effect transistor (RUTFET) is proposed as a low-power dynamically programmable logic device. It has several advantages over conventional reconfigurable TFETs: 1) Excellent scalability without any degradation of subthreshold swing (SS) and drain-induced barrier thinning (DIBT) with recessed channel structure. 2) High current drivability with increased band-to-band tunneling junction 3) Scaling of SS with tunneling barrier width defined by geometrical parameters. In this manuscript, its electrical characteristics are examined by technology computer-aided design (TCAD) simulation. It shows ~30× higher ON-state current than control devices and 41.8 mV/dec-SS during drain current increase by five orders magnitude. The reconfigurable operations for n- and p-type FETs are also discussed.
