Chuicai Rong1) 2),
1) School of Electronic Engineering, University of Electronic Science and Technology of China
2) School of Physics and Electronic Information, Gannan Normal University
GaN HEMT, large signal model, scalable model, class E power amplifier
The final version of this article with its full bibliographical information is available. To access the article, click here (Vol. 14 (2017), No. 18 pp. 20170806-20170806).
In this paper, a scalable large signal GaN HEMT model including nonlinear thermal sub-circuit is described. Only two scalable parameters are needed in the Ids scalable model by introducing a simple correction factor. The established model can predict the I–V curves at different-in-size AlGaN/GaN HEMTs devices accurately. Small signal S-parameters and large signal load pull tests with on-wafer measurement is used to further validate the proposed model. Finally, the proposed scalable model is used to design a broadband high efficiency continuous class-E power amplifier (PA). Experimental results show that this class E PA is realized from 2.5-3.5GHz with drain efficiency of 60%-70%, over 8.2dB gain and over 35.2dBm output by using a GaN HEMT with 1.25mm total gate width. The results show that the proposed model is useful for high efficiency amplifier design.
Edited and published by : The Institute of Electronics, Information and Communication Engineers Produced and listed by : Komiyama Printing Co., LTD.