Weizhong Chen1) 2),
Zhengsheng Han2) 3),
1) College of electronics engineering, Chongqing University of Posts and Telecommunications
2) Institute of Microelectronics of Chinese Academy of Sciences
3) University of Chinese Academy of Sciences
4) Shanghai Institute of Micro-system and Information Technology of Chinese Academy of Sciences
RC-IGBT, FWD, forward conduction, reverse conduction
The final version of this article with its full bibliographical information is available. To access the article, click here (Vol. 14 (2017), No. 19 pp. 20170817-20170817).
A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.
Edited and published by : The Institute of Electronics, Information and Communication Engineers Produced and listed by : Komiyama Printing Co., LTD.