IEICE Electronics Express
Online ISSN : 1349-2543
A RC-IGBT with Built-in Free Wheeling Diode Controlled by MOSFET
Weizhong ChenQiao GuoLijun HeZhengsheng HanYuchan WangXiaoyun Li
Author information
JOURNALS FREE ACCESS Advance online publication

Article ID: 14.20170817

Download PDF (3267K) Contact us

A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) with integrated Free-Wheeling Diode (FWD) in edge termination region controlled by metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed. The Field Limiting Ring (FLR) of the edge termination acts as the anode and the N-Collector acts as the cathode of the FWD. The MOSFET makes the FLR conduct reverse current at reverse conduction and float at reverse breakdown. Compared with the conventional RC-IGBT, which integrates the FWD in active cell region, the proposed device can eliminate the snapback easily at forward conduction. In addition, the forward voltage drop can be decreased largely.

Information related to the author
© 2017 by The Institute of Electronics, Information and Communication Engineers

Recently visited articles