A 0.18-μm CMOS Time-Domain Capacitive-Sensor Interface for Sub-1mG MEMS Accelerometers

Motohiro Takayasu; Shiro Dosho; Hiroyuki Ito; Daisuke Yamane; Toshifumi Konishi; Katsuyuki Machida; Noboru Ishihara; Kazuya Masu

doi:10.1587/elex.15.20171227

This article has now been updated. Please use the final version.

A 0.18-μm CMOS Time-Domain Capacitive-Sensor Interface for Sub-1mG MEMS Accelerometers

Motohiro Takayasu, Shiro Dosho, Hiroyuki Ito, Daisuke Yamane, Toshifumi Konishi, Katsuyuki Machida, Noboru Ishihara, Kazuya Masu

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Keywords: time domain, capacitive-sensor interface, relaxation oscillator, sub-1mG, microelectromechanical systems (MEMS), accelerometer

JOURNAL FREE ACCESS Advance online publication

Article ID: 15.20171227

DOI https://doi.org/10.1587/elex.15.20171227

The final version of this article is now available: Vol. 15 (2018), No. 2 pp. 20171227-20171227

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Abstract

A high-resolution capacitive-sensor interface for sub-1mG MEMS accelerometers is presented herein. A time-domain capacitive- sensor interface based on a relaxation oscillator with noise reduction is proposed to achieve a high resolution. A prototype interface is fabricated using a 0.18-μm CMOS process. The prototype is linked with a sub-1mG MEMS accelerometer, and its performance is investigated experimentally. The results confirm that the proposed interface is able to detect sub-1mG acceleration with a signal-to-noise ratio of 90.3 dB (an acceleration noise-floor of 9.0 μG/√Hz with a bandwidth of 12 Hz).

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