Research on hard-drive circuit simulation model of Dual-GCT

Abstract

In this paper, based on the operation principle and structural features of the Dual Gate Commutated Thyristor (Dual-GCT), a hard-drive simulation circuit model is presented. Dual-GCT is integrated by GCT-A and GCT-B. The Proposed model consists of two Double-M-2T-3R units in parallel which can be used to characterize the Dual-GCT’s switching characteristics and internal commutation mechanism. Then the key model parameters are extracted and the test circuit is established in PSPICE software, and the current and voltage waveform during switching are simulated. The accuracy of the model is verified by comparison of the simulation waveform with the measurement waveform.