Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

Tetsuya Ariyoshi; Jumpei Iwasa; Yuta Takane; Kenji Sakamoto; Akiyoshi Baba; Yutaka Arima

doi:10.1587/elex.15.20180177

This article has now been updated. Please use the final version.

Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

Tetsuya Ariyoshi, Jumpei Iwasa, Yuta Takane, Kenji Sakamoto, Akiyoshi Baba, Yutaka Arima

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Keywords: X-ray sensor, silicon sensor, silicon wafer, trench photodiode, Compton scattering, modulation transfer function (MTF)

JOURNAL FREE ACCESS Advance online publication

Article ID: 15.20180177

DOI https://doi.org/10.1587/elex.15.20180177

The final version of this article is now available: Vol. 15 (2018), No. 11 pp. 20180177-20180177

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Abstract

A silicon X-ray sensor with trench-structured photodiodes was studied and the influence of Compton scattering was estimated. By irradiating the target pixel with X-rays and measuring the signal from adjacent pixels, X-ray scattering and pixel blur of the proposed sensor was determined. An X-ray sensor with a length of 22.6 mm was designed and fabricated, and its modulation transfer function (MTF) was obtained. A sensor structure to improve the MTF level to that of CdTe was proposed.

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