An Experimental Study on Estimating Dynamic Junction Temperature of SiC MOSFET

抄録

Thermal characterization and modeling of power module is inevitable to take full advantages of power semiconductor device. Dynamic thermal modeling of power module, which is related to packaging structure and material property, is attracted attention for power electronics system design. The transient thermal resistance measurement standard, called static test method (JESD51-14 [1]), utilizes temperature dependency in I − V characteristics of power semiconductor device to estimate junction temperature. The dynamic gate threshold voltage shift of SiC MOSFET violates junction temperature estimation. This paper proposes accurate transient junction temperature estimation procedure for SiC MOSFET with advancing the static test method, and validates the temperature estimation with temperature sense diode embedded in SiC MOSFET. The proposed procedure enables to get accurate time response of T_J for SiC MOSFET, which enables dynamic thermal modeling of power module with SiC MOSFET.