Article ID: 15.20180726
This paper presents a 39 GHz broadband high-isolation mixer for 5G applications in 65 nm CMOS process. By adopting a common-gate (CG) gm stage with magnetic coupling, the mixer obtains a wide RF bandwidth without extra input matching components, which is benefit for system-level design. Meanwhile, it can improve gain and noise performance. Besides, a fully symmetrical design method is employed to keep a minimum LO leakage. According to experimental results, the mixer operates from 27.6 to 57.8 GHz and achieves a gain of 7.3 dB under LO power of 0 dBm. The LO-RF and LO-IF isolations are 59.5 and 57 dB, respectively.
