A 15W Wireless Power Receiver with an Improved Full-Wave Synchronous Rectifier

Chubin Wu; Guangjun Xie; Zhang Zhang; Xin Cheng; Tairan Fei; Jianmin Zeng; Xiaoyang Zeng

doi:10.1587/elex.15.20180732

この記事には本公開記事があります。本公開記事を参照してください。
引用する場合も本公開記事を引用してください。

A 15W Wireless Power Receiver with an Improved Full-Wave Synchronous Rectifier

Chubin Wu, Guangjun Xie, Zhang Zhang, Xin Cheng, Tairan Fei, Jianmin Zeng, Xiaoyang Zeng

著者情報

Chubin Wu
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Guangjun Xie
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Zhang Zhang
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Xin Cheng
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Tairan Fei
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Jianmin Zeng
Department of Electronic Science and Technology, School of Electronic Science and Applied Physics, Hefei University of Technology
Xiaoyang Zeng
State Key Lab of ASIC and System, School of Microelectronics, Fudan University

キーワード: Wireless Power Receiver, Full-Wave Synchronous Rectifier, Digital Pulse Width Controller

ジャーナルフリー早期公開

論文ID: 15.20180732

DOI https://doi.org/10.1587/elex.15.20180732

この記事には本公開記事があります。

The final version of this article is now available: Vol. 15 (2018), No. 20 pp. 20180732-20180732

詳細

抄録

This paper presents a 15 W wireless power receiver, which integrates an improved full-wave synchronous rectifier. In order to improve the system efficiency, two auxiliary MOSFETs are proposed to balance the conduction losses and the switching losses, and a digital pulse width controller is proposed to compensate the turn off delay to prevent the reverse leakage current. The chip was fabricated with TSMC 0.18 μm 1 poly 5 metal BCD technology with an active area of 3.2mm×4.8mm, and the measured performance of the system efficiency from the DC input of transmitter to the output of the receiver is achieved 88% at 12 V/ 1 A output.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）