IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

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Multi-layer stacking scheme of sol-gel based SiO2 towards thicker (>0.8 µm) cladding layers for optical waveguides
Ahmad Syahrin IdrisHaisong JiangKiichi Hamamoto
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ジャーナル フリー 早期公開

論文ID: 15.20180783

この記事には本公開記事があります。
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A multi-layer stacking scheme using a sol-gel SiO2 fabrication technique was developed towards stacking thick layers of >0.8 µm for cladding and passivation layers of optical waveguides. The multi-layer stacking scheme, which improves the intrinsic stress problem especially in case of thick layer stacking, enables a >0.8 µm sol-gel SiO2 thickness without cracking and peeling issues. As a result, thick layer of 3.5 µm with high surface resistivity of >6.6x1013 Ω/m was obtained, Furthermore, a-Si/SiO2 waveguide (cladding thickness: 1.9 μm) was realized to confirm the fundamental potential as a cladding layer.

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