Article ID: 16.20181136
This paper proposes to utilize a structure of thin BOX FDSOI in analog circuit design. The thin BOX layer is utilized to create area efficient capacitors. The design experiment shows that the combination of the thin BOX layer capacitor and a metal fringe capacitor improves the capacitance by 92% in comparison with the metal fringe capacitor only. Another advantage of the thin BOX FDSOI technology is the high controllability of the threshold voltages of transistors. As a demonstration of utilizing the advantage in analog circuit design, we designed a PMOS-type Dickson charge pump with dynamic threshold voltage control. The designed charge pump achieves 5.7 times larger output current and 3.5 times higher energy efficiency than a conventional charge pump.