IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

A Single Event Upset Tolerant Latch with Parallel Nodes
Changyong LiuNianlong LiuZhiting LinXiulong WuChunyu PengQiang ZhaoXuan LiJunning ChenXuan ZengXiangdong Hu
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JOURNAL FREE ACCESS Advance online publication

Article ID: 16.20190208

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Abstract

A single event upset (SEU) tolerant latch has been put forward in the current paper. By means of the parallel nodes structure design together with the layout-level optimization design, the proposed design is capable of substantially improving the immunity to SEU. In comparison with the conventional latch, the stacked latch with isolation and the dual-modular-redundancy (DMR) latch with C-element, the simulation results based on the 65nm CMOS process demonstrate that the proposed latch performs much better in SEU mitigation. For P-hit simulation, the proposed latch can achieve a correct output in the end, no matter the struck PMOS is at OFF state or ON state. For N-hit simulation, the proposed latch is also capable of mitigating the voltage transient and recovering to original state eventually.

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© 2019 by The Institute of Electronics, Information and Communication Engineers
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