This paper presents a radiation-hardened flip-flop called MSIFF. The sensitive node-pairs between the master and slave latches are readjusted at layout-level. It obtains a high SEU tolerance with slight area and performance degradation. A test chip was irradiated with the static and dynamic test modes to validate the SEU tolerance of the proposed MSIFF. Experimental results demonstrate superior performance of the MSIFF over the conventional DICE and D flip-flop.
