Study of Dual-Band Concurrent LNA Equipping Mutual Inductive Notch Filter Matching Circuit

Abstract

In this paper, small-area dual-band concurrent LNA with small gain deviation and low NF at a wide frequency range has been studied. Proposed LNA incorporates mutual inductive notch filter matching circuit on the input/output sides to improve gain deviation and NF, to reduce circuit area, and to expand operating frequency range. The measured S₁₁, S₂₂, S₂₁, and NF were −14.2/−10.9, −10.0/−16.5, 10.9/10.3, and 2.64/2.99 dB at 1.54/4.38 GHz, and gain deviation was 0.6 dB between the desired frequencies. Furthermore, the area is 0.47 mm². This LNA was designed by using TSMC-180 nm CMOS process.