Article ID: 18.20210049
This paper presents a high gain millimeter-wave (mmW) power amplifier (PA) fabricated in a 55 nm CMOS technology for V-band 5G wireless communication applications. An accurate magnetically-coupled-resonator (MCR) analysis and evaluation method is proposed to capture the MCR characteristics and optimize PA gain and bandwidth. A low-loss-matching-resonator (LLMR) technology is developed to enhance power gain and efficiency. The PA achieves a peak gain of 21.1 dB at 67 GHz with a 3 dB bandwidth (BW-3dB) of 10 GHz. At 67 GHz, the measured saturated output power (Psat), the output 1dB compression point (OP1dB) and the peak PAE are 13.9 dBm, 9.7 dBm and 11.8%, respectively.
