Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Masahiro Nada; Ming-chen Chen; Hiroaki Katsurai; Yasuhiko Nakanishi; Toshihide Yoshimatsu; Atsushi Kanda; Hirotaka Nakamura; Kimikazu Sano

doi:10.1587/elex.18.20210142

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Practically implementable high-sensitivity 10-Gbit/s avalanche photodiode using inverted p-down design

Masahiro Nada, Ming-chen Chen, Hiroaki Katsurai, Yasuhiko Nakanishi, Toshihide Yoshimatsu, Atsushi Kanda, Hirotaka Nakamura, Kimikazu Sano

著者情報

キーワード: Avalanche photodiode, 10 Gbit/s, passive optical network, burst mode

ジャーナルフリー早期公開

論文ID: 18.20210142

DOI https://doi.org/10.1587/elex.18.20210142

この記事には本公開記事があります。

The final version of this article is now available: Vol. 18 (2021), No. 11 pp. 20210142-20210142

詳細

抄録

We developed a practical high-sensitivity 10-Gbit/s III-V compound-based avalanche photodiode (APD), and an receiver optical subassembly (ROSA) mounting the APD for 10-Gbit/s burst-mode operation. The 10-Gbit/s APD features an inverted p-down structure with a 200-nm InAlAs avalanche layer that produces low excess noise and a low dark current simultaneously at large gain. By combining our APD with a burst-mode trans-impedance amplifier (B-TIA), the resulting APD-ROSA exhibited -32.7 dBm for 10-Gbit/s burst-mode optical signals, which allows for a loss budget exceeding 35 dB on optical access networks such as passive-optical networks.

責任著者(Corresponding author)

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