A high gain 79-GHz low noise amplifier using inductor-embedded neutralization technique

Abstract

This paper presents a 79 GHz low noise amplifier (LNA) design featuring high gain fabricated in a 40-nm CMOS process. To make better use of active devices, we propose an inductor-embedded neutralization technique. The implemented prototype consists of four-stage common-source amplifiers using the proposed technique and transformer-based matching networks. The measurement results show that the amplifier realizes a peak gain of 23 dB at 79 GHz with 14.4 mW power dissipation and 0.4 mm² area occupation. The LNA achieves a minimum noise figure (NF) of 6.3 dB.