High-speed switching operation for a SiC CMOS and power module

Abstract

This paper deals with the high-speed switching operation of a main circuit when using a silicon carbide (SiC) complementary metal-oxide semiconductor (CMOS) and power module for the high-speed drive. When using the developed power module and SiC CMOS gate buffer, we experimentally achieved the turn-on and turn-of switching speeds of about -100 and 80 V/ns at a DC bus voltage of 600 V and a load current of 20 A. Based on the I-V characteristics of the developed SiC CMOS and the gate charge of the SiC power MOSFET, the approximate switching time was calculated.