Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN Substrates

Atsushi Moriwaki; Shinji Hara

doi:10.1587/elex.18.20210486

この記事には本公開記事があります。本公開記事を参照してください。
引用する場合も本公開記事を引用してください。

Comparing distortion and power characteristics of AlGaN/GaN HEMTs between SiC and GaN Substrates

著者情報

キーワード: AlGaN/GaN, high-electron-mobility transistor (HEMT), freestanding GaN substrate, SiC substrate, current collapse, intermodulation distortion

ジャーナルフリー早期公開

論文ID: 18.20210486

DOI https://doi.org/10.1587/elex.18.20210486

この記事には本公開記事があります。

The final version of this article is now available: Vol. 19 (2022), No. 1 pp. 20210486-20210486

詳細

抄録

In this paper, we compare the distortion and power characteristics between AlGaN/GaN high-electron-mobility transistors (HEMTs) with different epi-structures. Third-order intermodulation distortion (IM3) measurement evaluates distortion characteristics, and on-wafer load and source-pull measurements evaluate the power performance. The results show that the AlGaN/GaN HEMTs directly fabricated on GaN substrates without nucleation layer perform better than those fabricated on SiC substrates. Furthermore, the distortion performance is compared with and without field plate.

責任著者(Corresponding author)

J-STAGEへの登録はこちら（無料）