IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

Low-power and Small-area 4-ch 25-Gb/s Transimpedance Amplifiers in 65-nm CMOS Process
Yasuhiro TakahashiDaisuke ItoMakoto NakamuraAkira TsuchiyaToshiyuki InoueKeiji Kishine
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JOURNAL FREE ACCESS Advance online publication

Article ID: 20.20230339

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Abstract

We present an area-efficient and low-power four-channel 25-Gb/s trans-impedance amplifier for an Rx analog front-end (Rx-AFE) on an optical receiver. The proposed circuit features a local negative-feedback trans-impedance amplifier (TIA) to expand the bandwidth. The TIA and post-amplifier use regulated cascode (RGC) topology and two differential amplifier stages with an inductive peaking bandwidth extension technique to acquire 19.6 GHz of the -3 dB bandwidth and 53.3 dBΩ of the gain. We designed the system using a 65-nm CMOS process, and the proposed four-channel Rx-AFE TIAs achieved a small area of 300 µm × 800 µm per lane. From the measurement results, the differential output voltage was 160 mV at 25-Gb/s PRBS31. The test chip has also 85.0 mW of power consumption; hence, it achieves 0.85 mW/Gb/s of power efficiency.

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