Article ID: 21.20230634
Due to the low noise and high linearity characteristics of GaAs Hetero-junction Bipolar Transistors (HBTs), Low Noise Amplifiers (LNAs) are widely used in aerospace, communication, computer, and other fields. Extracting device model parameters is of great significance for subsequent research on the electromagnetic compatibility characteristics of such devices. In this paper, based on the small signal model, the model parameters of the amplifier are extracted by combining the I-V characteristics of the amplifier under different external voltage conditions. The linear model parameters are extracted using a fitting analysis method to obtain the Pspice circuit model of the GaAs amplifier under normal operating conditions. The simulation results align closely with the measured results. Compared with traditional modeling methods, this approach effectively resolves the issue of being unable to measure parameters due to chip packaging. This method holds substantial significance in extracting circuit model parameters and conducting in-depth research on circuit electromagnetic compatibility characteristics of this device.
