IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

A 840-µm2 low-power all-MOS temperature sensor front-end with real-time voltage calibration
Hao LiZhao YangDezhu KongAiguo YinJibing PengPeiyong Zhang
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JOURNAL FREE ACCESS Advance online publication

Article ID: 21.20240055

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Abstract

This letter presents an 840µm2 557nW temperature sensor front-end designed for system on chip (SoC) thermal monitoring. The circuit is implemented using MOS transistors exclusively, which enhances its scalability with process technologies and compatibility with digital circuit processes. To address MOSFETs circuit’s process variation issues, a differential voltage readout scheme is employed. Dynamic element matching (DEM) is used to minimize mismatch of the circuit. The sensor is self-referenced, eliminating the need for an external reference voltage. Real-time voltage calibration (RVC) scheme is used to improve the performance of supply sensitivity. It is fabricated using a 55nm process, and the measurement results showed an error of -0.69/0.85℃ across 16 samples over a temperature range of 0℃ to 100℃ with a low-cost one-point calibration at 30℃, while the maximum supply sensitivity is 3.3℃/V.

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© 2024 by The Institute of Electronics, Information and Communication Engineers
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