論文ID: 21.20240205
An electron injection enhanced bi-mode MOS controlled thyristor (IE-Bi-MCT) structure is proposed by introducing a n-type carrier storage (CS) layer under the p++ diverter region of BRT to prevent the extraction of holes during conduction, which leads to the electron injection enhancement (IE) effect similar to IGBT. This is beneficial to the holes accumulated at n CS layer being swept into the p-base region, and the voltage drop across the lateral resistance of the p-base region is increased, which causes the thyristor to be quickly latched up, thus IE-Bi-MCT is converted from IGBT mode to thyristor mode. As a results, the snapback phenomenon is suppressed during forward conduction and conduction loss is significantly reduced. The simulation results show that the snapback phenomenon can be eliminated under the proper parameters of n CS layer, and the on-state voltage drop decreased by about 38% compared with the conventional BRT under 30A/cm2 current density.
