Investigation of the Partially Recoverable Gate Leakage On Normally-OFF Schottky-type p-GaN gate AlGaN/GaN HEMTs

Abstract

In this work, gate leakage behavior on Schottky-type p-GaN gate AlGaN/GaN HEMT is investigated, especially when the Schottky junction is damaged. A controllable degradation of the Schottky junction is achieved, then the previous semi-floated p-GaN is electrically connected to the gate electrode. Therefore, the pre-stressed GaN device exhibits an improved gate stability, as well as a normal gate control and large gate swing. Furthermore, the associated trap level is extracted by Arrhenius plot based on the exponential relationship between the recovery speed versus temperature.