IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543

This article has now been updated. Please use the final version.

An Embedded Temperature-Compensated Ring Oscillator with All-MOS for Microcontroller Units
Shugang LiuHao ShenQiangguo YuChunyan Lu
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JOURNAL FREE ACCESS Advance online publication

Article ID: 22.20240644

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Abstract

This paper presents an all-MOS ring oscillator with a temperature compensation circuit, which can be integrated into a microcontroller unit (MCU) chip. We suppose a compensation circuit to mitigate the frequency drift caused by temperature fluctuations. The absence of resistors and capacitors in the oscillator can significantly reduce the layout area. In addition, the current-starved circuit minimizes power consumption and enabls flexible frequency adjustment. The design has been simulated using a 180nm CMOS process, resulting in a layout area of the oscillator less than 0.00495mm2. Experimental results also demonstrate that the oscillator achieves a stable clock of 350MHz at a voltage-controlled input of 850mV. Furthermore, across the temperature range of -40℃ to 125℃, the maximum frequency variation remains between -0.88% to +0.297%. The oscillator’s power consumption is as low as 0.315mW.

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