Article ID: 22.20250227
This letter presents a C-Ku-band high-efficiency power amplifier (PA) fabricated using 0.25µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. A novel bias network criterion, which quantifies the bandwidth-efficiency tradeoff and is used to improve the high-band efficiency, is thoroughly discussed. The partial harmonic control amplification cell (PHCAC) design method is applied to obtain the optimum source and load impedances for each transistor in the PA’s output stage at both fundamental and second harmonic frequencies, thereby enhancing the mid-band efficiency. In addition, the intrinsic PAE of the transistor is sufficiently high at low frequencies, resulting in a higher overall efficiency. The proposed 7-13 GHz high-efficiency GaN PA MMIC delivers an average output power of 42.1-43.3 dBm (16.2-21.3 W) with a power-added efficiency (PAE) of 38%-43% and a gain of 30.7-32.9 dB under a drain voltage of 28 V. The proposed GaN PA MMIC occupies an area of 13.1mm2
