A compact and monolithically integrable 140 GHz InP HEMT fundamental mixer using 80-nm T-gate technology for terahertz receiver front-ends

Xu Han; Haomiao Wei; Yuxuan Chen; Yifei Xie; Cong Zhang; Yongheng Gong; Feng Yang; Tong Liu; Shengxiang Liu; Jia Sun; Zhi Jin; Yong Zhang; Jingyuan Shi; Dayong Zhang; Peng Ding; Yongbo Su

doi:10.1587/elex.23.20250697

This article has now been updated. Please use the final version.

A compact and monolithically integrable 140 GHz InP HEMT fundamental mixer using 80-nm T-gate technology for terahertz receiver front-ends

Xu Han, Haomiao Wei, Yuxuan Chen, Yifei Xie, Cong Zhang, Yongheng Gong, Feng Yang, Tong Liu, Shengxiang Liu, Jia Sun, Zhi Jin, Yong Zhang, Jingyuan Shi, Dayong Zhang, Peng Ding, Yongbo Su

Author information

Xu Han
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Haomiao Wei
School of Electronic Science and Engineering, University of Electronic Science and Technology of China
Yuxuan Chen
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Yifei Xie
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Cong Zhang
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Yongheng Gong
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Feng Yang
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
Tong Liu
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
Shengxiang Liu
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Jia Sun
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
University of Chinese Academy of Sciences
Zhi Jin
International School of Microelectronics, Dongguan University of Technology
Yong Zhang
School of Electronic Science and Engineering, University of Electronic Science and Technology of China
Jingyuan Shi
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
Dayong Zhang
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
Peng Ding
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences
Yongbo Su
High-Frequency High-Voltage Devices and Integrated Circuits Research and Development Center, Institute of Microelectronics of the Chinese Academy of Sciences

Keywords: THz, high electron mobility transistor, indium phosphide, fundamental resistive mixers, receivers, integrated circuits

JOURNAL FREE ACCESS Advance online publication

Article ID: 23.20250697

DOI https://doi.org/10.1587/elex.23.20250697

The final version of this article is now available: Vol. 23 (2026), No. 6 pp. 20250697-20250697

Details

Abstract

A compact fundamental 140 GHz mixer using our in-house 80 nm T-gate InP HEMT process is designed, fabricated and characterized. A compact resistive topology is designed to enable low power consumption, high conversion gain and high integration. Measurement results show a maximum conversion gain of -9 dB and an IF bandwidth of 15 GHz within the 130 GHz-150 GHz range under a LO power of -1 dBm. The proposed resistive mixer features a compact size of 0.63 mm × 0.9 mm and can be fabricated with InP HEMT LNA on the same wafer. The results demonstrate that the mixer is well suited for integrated terahertz receiver front-ends.

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