A 0.4 V, 5.3 pW Leakage Data Retention Flip-Flop Based on Source-Biased-Stacked Inverter for Low Power Application

Abstract

Data-retention flip-flop (DRFF) efficiently maintains data during sleep mode and retains state during transitions between active and sleep mode. This paper proposes a novel source-biased stacked inverter (SBS-Inverter) and a low-leakage, structure-reused DRFF. The sleep latch circuit constructed using the SBS-Inverter can effectively reduce the power of DRFF when storing data. Reuse of the structure improves the situation of redundant transistors in certain DRFF. Fine-grained inverter level optimization reduces delay and power during the active mode. The DRFF was implemented using a 55 nm process and subjected to comprehensive analysis. Post-layout simulation results at a supply voltage of 0.4 V indicate that the proposed DRFF’s data retention leakage power is only 5.3 pW. At a supply voltage of 0.8 V, the power-delay product is only 0.146 nW*ns@20 MHz. Monte Carlo simulation results considering process, voltage and temperature (PVT) variations show that the proposed DRFF can operate reliably down to a supply voltage of 0.4 V.