IEICE Electronics Express
Online ISSN : 1349-2543
ISSN-L : 1349-2543
A capacitively coupled SiC MOSFET gate driver using dv/dt enhanced OOK transmitter with CMTI of 220V/ns
Jiahao LiJicun LuRuifang TieDanping YangZeyan WuZhenhai ChenCheng JinZhiguo YuXiaofeng GuYongshen YinZongguang YuHail Liang
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JOURNAL FREE ACCESS Advance online publication

Article ID: 23.20260019

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Abstract

This paper presents a high Common Mode Transient Immunity (CMTI) modulation circuit for a capacitively coupled gate driver. It proposes an enhanced on-off keying (OOK) transmitter architecture with integrated common-mode (CM) substrate modulation. Through collaboration with the CM interference detection circuit, transmission accuracy and CMTI are improved without additional delay.
Test results show the prototype driver achieves 220 V/ns CMTI, 20 ns propagation delay, the rise and fall times of 10 ns and 12 ns respectively under 15 V supply voltage, and the rise and fall time of 22 ns and 24 ns respectively under 30 V supply voltage with 2.5 MHz frequency and 3.5 nF load.

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© 2026 by The Institute of Electronics, Information and Communication Engineers
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