抄録
Photocatalytic titanium dioxide (TiO2) thin films are deposited on silicon wafers by pulsed laser deposition technique. Angular distributions of droplets and growth species emitted from the target are examined. The surface roughness and the film thickness also depend on the oxygen gas pressure and laser fluence. The substrate temperature dependence of XRD data of the films is also studied. It is found that the anatase-type-crystalline TiO2 thin films are formed at the substrate temperature of 250°C. Photocatalytic effect of the films is confirmed with methylene-blue aqueous solutions.
