電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<光・量子エレクトロニクス>
ゾルゲル法で作製したTi添加LiNbO3厚膜における電気光学効果
脇田 紘一井上 真吾音羽 亮平西脇 彰高橋 誠佐橋 家隆
著者情報
ジャーナル フリー

2004 年 124 巻 12 号 p. 2401-2406

詳細
抄録
Stoichiometric LiNbO3 thick films on a z-cut LiNbO3 substrate were grown by using a sol-gel method improved by the addition of a large amount of protective colloid such as polyvinyl alcohol to the precursor solution. This method has been expanded to grow Ti-doped LiNbO3 waveguide films and low propagation loss and efficient electro-optic effect for these films have been made clear using a Mach-Zehnder interferometer. The magnitude of Pockels effect in the waveguide structure has been compared with that of a z-cut congruent LiNbO3 substrate and the similar results have been confirmed. The superiority of this epitaxial layer to the previous one that enables us to fabricate with easy processing and low cost is also discussed.
著者関連情報
© 電気学会 2004
前の記事 次の記事
feedback
Top