抄録
We report high-power technologies in 0.8μm Al-free InGaAsP/InGaP/AlGaAs laser diodes. To realize the high-power operation, the improvement of catastrophic optical mirror damage (COMD) power density level is required. In addition to the use of low surface recombination velocity of Al-free materials, optimization of waveguide thickness in broad waveguide strucuture with tensile-strained barriers and current blocking structure near facets has lead to high COMD power density level. Highly stable operation of Al-free laser diodes with these structures has been obtained over 2500 hours at 2W from a stripe width of 50μm. Applications of high power laser diodes are also described.
