抄録
Ti4+ and Er3+ LiNbO3 films on the z-cut congruent LiNbO3(CLN) wafer substrates were grown by using a sol-gel method. The orientation relationships between films and substrates were determined by x-ray diffraction, Raman spectroscopy, scanning electron microscope(SEM), and the results showed that (006) oriented LiNbO3 epitaxial layers with parallel epitaxial relationships could be grown on a z-cut CLN wafer substrate. Er3+ exhibited an emission at 1.53μm and efficient luminosity in the visible light could be observed from Ti:Er:LiNbO3 films. The strongest luminosity was observed for the films with Ti4+concentration 1.5 mol% and Er3+concentration 0.05 mol% Ti:Er:LiNbO3 films.
