電気学会論文誌C(電子・情報・システム部門誌)
Online ISSN : 1348-8155
Print ISSN : 0385-4221
ISSN-L : 0385-4221
<電子物性・デバイス>
Al(111)表面における超音速N2ビームによる極薄AlN膜形成
寺岡 有殿吉越 章隆
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2009 年 129 巻 2 号 p. 294-295

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The Al(111) surface has been directly nitrided by supersonic N2 molecular beams at 473 K. A translational kinetic energy threshold of the nitridation was 1.8 eV. A nitrogen uptake curve obtained at the translational energy of 2.0 eV showed a linear profile with the nitrogen dose indicating non-protective layer formation. Al-2p photoemission spectra were involved a merely-shifted shoulder structure in the higher binding energy side so that sub-nitride components were included in the AlN overlayer.
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© 電気学会 2009
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