Electron Transport Simulation in Silicon Based on Analytic Band Model

抄録

Ensemble Monte Carlo simulation based on analytic band model has been developed for electron transport in silicon. The present simulator includes L valley, in addition to X valley, impact ionization and donor ionization rate with the temperature dependence of some physical parameters. Nevertheless the simple model, this simulator works well within the practical ranges of temperatures, electric fields and donor concentrations. Furthermore, the simulation is executed on a personal computer.