2011 年 131 巻 7 号 p. 1319-1320
A way of large temperature coefficient on PTAT voltage generator is proposed. By stacking the proposed circuits, a PTAT voltage generator with large temperature coefficient can be realized. The PTAT voltage generator is analyzed by use of 4-terminal MOSFET model in subthreshold region based on the diffusion current. The temperature coefficient of measured value is compared with that of theoretical value.
J-STAGEがリニューアルされました! https://www.jstage.jst.go.jp/browse/-char/ja/